AOC3860 general description product summary v ss r ss(on) (at v gs =4.5v) < 2.7m? r ss(on) (at v gs =4.0v) < 2.8m? r ss(on) (at v gs =3.8v) < 2.85m? r ss(on) (at v gs =3.1v) < 3.3m? r ss(on) (at v gs =2.5v) < 4.2m? applications typical esd protection hbm class 2 symbol 12v common-drain dual n-channel mosfet orderable part number package type form minimum order qu antity 12v units ? trench power mosfet technology ? low r ss(on) ? with esd protection to improve battery performance and safety ? common drain configuration for design simplicity ? rohs and halogen-free compliant ? battery protection switch ? mobile device battery charging and discharging rating AOC3860 alphadfn 3.05x1.77_6 tape & reel 8000 parameter absolute maximum ratings t a =25c unless otherwise noted g1 d1 s1 g2 d2 s2 alphadfn 3.05x1.77_6 top view bottom view pin1 top view bottom view pin1 3 1 4 6 s1 s2 g1 g2 s1 s2 pin1 symbol v ss v gs t a =25c i s i sm t a =25c p d t j , t stg symbol t 10s steady-state note 1. i s rated value is based on bare silicon.mounted on 70 mmx70mm fr-4 board. note 2. pw <10 s pulses, duty cycle 1% max. thermal characteristics w 100 units source current(dc) note1 rating junction and storage temperature range maximum junction-to-ambient c/w r q ja c/w maximum junction-to-ambient parameter c units power dissipation note1 -55 to 150 30 a gate-source voltage source current(pulse) note2 parameter source-source voltage v 8 v typical 40 50 12 2.5 rev.1.0: may 2016 www.aosmd.com page 1 of 5
AOC3860 symbol min typ max units bv sss 12 v 1 t j =55c 5 i gss 10 a v gs(th) gate threshold voltage 0.3 0.55 0.9 v 1.5 2.15 2.7 t j =125c 2.0 2.95 3.7 1.55 2.2 2.8 m? 1.6 2.25 2.85 m? 1.7 2.45 3.3 m? 1.9 2.8 4.2 m? g fs 70 s v fss 0.52 1 v r g 1.2 k? q g 44 nc t d(on) 2 s t r 4.5 s t d(off) 6 s t f 11 s applications or use as critical components in life support devices or systems are not authorized. aos does not assumeany liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. switching parameters v ss =0v, v gs =8v test circuit 2 gate leakage current r ss(on) v ss =v gs, i s =250 m a test circuit 3 v gs =4.5v, i s =5a test circuit 4 m? v gs =4.0v, i s =5a test circuit 4 dynamic parameters gate resistance f=1mhz turn-off fall time v g1s1 =4.5v, v ss =6v, r l =1.2 w , r gen =3 w test circuit8 forward source to source voltage v gs =3.8v, i s =5a test circuit 4 turn-on rise time forward transconductance i s =1a,v gs =0v test circuit 5 v ss =5v, i s =5a test circuit 3 turn-on delaytimeturn-off delaytime static source to source on-resistance v gs =3.1v, i s =5a test circuit 4 v gs =2.5v, i s =5a test circuit 4 v g1s1 =4.5v, v ss =6v, i s =5a total gate charge electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i sss a zero gate voltage source current source-source breakdown voltage i s =250 m a, v gs =0v test circuit 6 v ss =12v, v gs =0v test circuit 1 rev.1.0: may 2016 www.aosmd.com page 2 of 5
AOC3860 typical electrical and thermal characteristics 0 2 4 6 8 10 0 0.5 1 1.5 2 i s (a) v gs (volts) figure 2: transfer characteristics 0 1 2 3 4 5 0 2 4 6 8 10 r ss(on) (m w ) i s (a) figure 3: on - resistance vs. source current and 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on - resistance vs. junction temperature v gs =2.5v i s =5a v gs =4.5v i s =5a v gs =3.1v i s =5a v gs =3.8v i s =5a v gs =4.0v i s =5a 25 c 125 c v ds =5v v gs =2.5v v gs =4.5v 0 2 4 6 8 10 0 1 2 3 4 5 i s (a) v ss (volts) figure 1: on-region characteristics 1.5v 2.0v 2.5v 3.0v 3.5v 4.0v 4.5v v gs =1.0v v gs =3.1v v gs =4.0v v gs =3.8v s figure 3: on - resistance vs. source current and gate voltage 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v fss (volts) figure 6: forward source to source characteristics 25 c 125 c figure 4: on - resistance vs. junction temperature 0 2 4 6 8 0 1 2 3 4 5 r ss(on) (m w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage i s =5a 25 c 125 c rev.1.0: may 2016 www.aosmd.com page 3 of 5
AOC3860 typical electrical and thermal characteristics 0 1 2 3 4 5 0 10 20 30 40 50 60 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0.1 1 10 100 1000 1e-050.00010.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) v ss =6v i s =5a t j(max) =150 c t a =25 c 10 m s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i s (amps) v ss (volts) v > or equal to 2.5v 10 m s 1ms dc r ss(on) limited t j(max) =150 c t a =25 c 100 m s 10ms pulse width (s) figure 9: single pulse power rating junction-to- ambient (note1) 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q ja normalized transient thermal resistance pulse width (s) figure 10: normalized maximum transient thermal imp edance (note1) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse v gs > or equal to 2.5v figure 8: maximum forward biased safe operating area (note1) rev.1.0: may 2016 www.aosmd.com page 4 of 5
AOC3860 t e s t c i r c u i t 1 i s s s t e s t c i r c u i t 2 i g s s 1 , 2 positive vss for isss+ positive vgs for igss1+ negative vss for isss- negative vgs for igss1- when fet1 is measured between gate and source of fet2 are shorted t e s t c i r c u i t 3 v g s ( o f f ) t e s t c i r c u i t 4 r s s ( o n ) when fet1 is measured vss/is between gate and source of fet2 are shorted t e s t c i r c u i t 5 v f ( s s ) 1 , 2 t e s t c i r c u i t 6 b v d s s positive vss for isss+ negative vss for isss- g2 d2 s2 g1 d1 s1 a vss vg g2 d2 s2 g1 d1 s1 a g2 d2 s2 g1 d1 s1 a vgs vss is g2 d2 s2 g1 d1 s1 v vgs vss s2 4.5v s2 when fet1 measured fet2 v gs=4.5v t e s t c i r c u i t 7 b v g s o 1 , 2 t e s t c i r c u i t 8 positive vss for isss+ s w i t c h i n g t i m e negative vss for isss- when fet1 is measured between gate and source of fet2 are shorted i f g2 d2 g1 d1 s1 v vgs=0 vss is g2 d2 g1 d1 s1 v g2 d2 s2 g1 d1 s1 v i g g2 d2 s2 g1 d1 s1 vin vout rev.1.0: may 2016 www.aosmd.com page 5 of 5
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